Conduction Band Electronic States of Fluorine-Substituted Furan-Phenylene Co-Oligomer Film on the Surfaces of Silicon and Zinc Oxide

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Abstract

The results of the study of low-energy secondary electronic spectra of films of fluoro-substituted furan-phenylene co-oligomer in the energy range from 5 to 20 eV above EF are presented. Thermal vacuum deposition of films with a thickness of 8–10 nm was performed on the surface of (SiO2)n-Si substrates and layer-by-layer deposited ZnO. The collocation of the main maxima of the density of the electronic states in the conduction band of the studied films and the properties of the potential barrier between the films and the substrate surfaces were determined. The surface topography of thin films of fluorine-substituted furan-phenylene co-oligomer was studied by atomic force microscopy. The films on the ZnO surface have a granular structure with a grain diameter in the surface plane of about 100 nm. On the (SiO2)n-Si surface, the grains have an elongated shape, characteristic of microwhiskers.

About the authors

A. S. Komolov

St-Petersburg State University

Email: a.komolov@spbu.ru
St. Petersburg, Russia

I. A. Pronin

Penza State University

Penza, Russia

E. F. Lazneva

St-Petersburg State University

St. Petersburg, Russia

V. S. Sobolev

St-Petersburg State University

St. Petersburg, Russia

E. A. Dubov

St-Petersburg State University

St. Petersburg, Russia

A. A. Komolova

St-Petersburg State University

St. Petersburg, Russia

E. V. Zhizhin

St-Petersburg State University

St. Petersburg, Russia

D. A. Pudikov

St-Petersburg State University

St. Petersburg, Russia

S. A. Pshenichnyuk

Institute of Molecule and Crystal Physics, Ufa Federal Research Centre, Russian Academy of Sciences

Ufa, Russia

C. S. Becker

Vorozhtsov Novosibirsk Institute of Organic Chemistry, Siberian Branch of the Russian Academy of Sciences

Novosibirsk, Russia

M. S. Kazantsev

Vorozhtsov Novosibirsk Institute of Organic Chemistry, Siberian Branch of the Russian Academy of Sciences

Novosibirsk, Russia

F. D. Akbarova

Physical-Technical Institute, Uzbekistan Academy of Sciences

Tashkent, Uzbekistan

U. B. Sharopov

Physical-Technical Institute, Uzbekistan Academy of Sciences

Tashkent, Uzbekistan

References

  1. Sosorev A.Y., Nuraliev M.K., Feldman E.V. et al. // Phys. Chem. Chem. Phys. 2019. V. 21. P. 11578. https://doi.org/10.1039/C9CP00910H
  2. Nenashev G.V., Aleshin A.N., Ryabko A.A. et al. // Solid State Commun. 2024. V. 388. P. 115554. https://doi.org/10.1016/j.ssc.2024.115554
  3. Shaposhnik P.A., Trul A.A., Poimanova E.Yu. et al. // Org. Electron. 2024. V. 129. P. 107047. https://doi.org/10.1016/j.orgel.2024.107047
  4. Koskin I.P., Becker Ch.S., Sonina A.A. et al. // Adv. Funct. Mater. 2021. V. 31. P. 2104638. https://doi.org/10.1002/adfm.202104638
  5. Mannanov A.A., Kazantsev M.S., Kuimov A.D. et al. // J. Mater. Chem. C. 2019. V. 7. P. 60. https://doi.org/10.1039/C8TC04151B
  6. Kazantsev M.S., Frantseva E.S., Kudriashova L.G. et al. // RSC Adv. 2016. V. 6. P. 92325. https://doi.org/10.1039/C6RA23160H
  7. Hill I.G., Schwartz J., Kahn A. // Org. Electron. 2000 V. 1. P. 5. https://doi.org/10.1016/S1566-1199(00)00002-1
  8. Krzywiecki M., Smykala S., Kurek J. et al. // Phys. Chem. Chem. Phys. 2022. V. 24. P. 11828. http://doi.org/10.1039/D2CP00844K
  9. Komolov A.S., Akhremtchik S.N., Lazneva E.F. // Spectrochim. Acta. A. 2011. V. 798. P. 708. https://doi.org/10.1016/j.saa.2010.08.042
  10. Sharopov U.B., Abdusalomov A., Kakhramonov A. et al. // Vacuum. 2023. V. 213. P. 112133. https://doi.org/10.1016/j.vacuum.2023.112133
  11. Frankenstein H., Leng C.Z., Losego M.D. et al. // Org. Electron. 2019. V. 64. P. 37. https://doi.org/10.1016/j.orgel.2018.10.002
  12. Walter T.N., Lee S., Zhang X. et al. // Appl. Surf. Sci. 2019. V. 480. P. 43. https://doi.org/10.1016/j.apsusc.2019.02.182
  13. Pronin I.A., Plugin I.A., Kolosov D.A. et al. // Sens. Actuators. A. 2024. V. 377. P. 115707. https://doi.org/10.1016/j.sna.2024.115707
  14. Cauduro A.L.F., dos Reis R., Chen G. et al. // Ultramicroscopy. 2017. V. 183. P. 99. https://doi.org/10.1016/j.ultramic.2017.03.025
  15. Комолов А.С., Дубов Е.А., Убович М. и др. // Изв. РАН. Сер. физ. 2025. Т. 89. Вып. 3. C. 392. https://doi.org/10.31857/S0367676525030094
  16. Komolov A.S., Moeller P.J. // Appl. Surf. Sci. 2005. V. 244. P. 573. https://doi.org/10.1016/j.apsusc.2004.10.122
  17. Комолов А.С., Пронин И.А., Лазнева Э.Ф. и др. // Кристаллография 2024. Т. 69. № 4. С. 670. https://doi.org/10.31857/S0023476124040139
  18. Pshenichnyuk S.A., Asfandiarov N.L., Rahmeev R.G. et al. // J. Chem. Phys. 2024. V. 161. P. 114303. https://doi.org/10.1063/5.0232036
  19. Pshenichnyuk S.A., Modelli A., Lazneva E.F. et al. // J. Phys. Chem. A. 2016. V. 120. P. 2667. https://doi.org/10.1021/acs.jpca.6b02272
  20. Garcia-Basabe Y., Pedrozo-Penafiel M.J., Figueredo I.S. et al. // J. Phys. Chem. C. 2025. V. 129. P. 8783. https://doi.org/10.1021/acs.jpcc.5c01259
  21. Komolov A., Schaumburg K., Moeller P.J. et al. // Appl. Surf. Sci. 1999. V. 142. P. 591. https://doi.org/10.1016/S0169-4332(98)00924-6
  22. Hwang J., Wan A., Kahn A. // Mater. Sci. Eng. R. Rep. 2009. V. 64. P. 1. https://doi.org/10.1016/j.mser.2008.12.001
  23. Pronin I.A., Averin I.A., Karmanov A.A. et al. // Nanomaterials. 2022. V. 12. P. 1924. https://doi.org/10.3390/nano12111924
  24. Komolov A.S., Lazneva E.F., Akhremtchik S.N. // Appl. Surf. Sci. 2010. V. 256. P. 2419. https://doi.org/10.1016/j.apsusc.2009.10.078
  25. Bartos I. // Progr. Surf. Sci. 1998. V. 59. P. 197. https://doi.org/10.1016/S0079-6816(98)00046-X
  26. Komolov A.S., Moeller P.J., Aliaev Y.G. et al. // J. Mol. Struct. 2005. V. 744–747. P. 145. http://doi.org/10.1016/j.molstruc.2005.01.047
  27. Sharopov U.B., Kaur K., Kurbanov M.K. et al. // Silicon. 2022. V. 14. P. 4661. https://doi.org/10.1007/s12633-021-01268-0
  28. Sharopov U.B., Kaur K., Kurbanov M.K. et al. // Thin Solid Films. 2021. V. 735. P. 138902. https://doi.org/10.1016/j.tsf.2021.138902
  29. Sharopov U., Gopparov U., Rashidov K. et al. // Radiat. Eff. Defects Solids. 2023. V. 178. P. 539. https://doi.org/10.1080/10420150.2022.2133716
  30. Komolov A.S., Lazneva E.F., Gerasimova N.B. et al. // J. Electron. Spectrosc. Relat. Phenom. 2019. V. 235. P. 40. https://doi.org/10.1016/j.elspec.2019.07.001
  31. Shu A.L., McClain W.E., Schwartz J. et al. // Org. Electron. 2014. V. 15. P. 2360. https://doi.org/10.1016/j.orgel.2014.06.039
  32. Braun S., Salaneck W., Fahlman M. // Adv. Mater. 2009. V. 21. P. 1450. https://doi.org/10.1002/adma.200802893

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