Analysis of crystal structure of epitaxial nanoheterostructures with multiple pseudomorphic quantum wells {InхGa1–хAs/GaAs} on GaAs (100), (110) AND (111) )А substrates

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The crystal structure of {In0.1Ga0.9As/GaAs} × 10 and {In0.2Ga0.8As/GaAs} × 10 epitaxial multilayer films on GaAs substrates with different orientations has been studied (100), (110), (111)A in order to identify features that may be related to the previously discovered increased efficiency of terahertz radiation generation in films with orientations (110) and (111)A. Significant concentrations of twins and package defects were found in films on non-standard GaAs (110) and (111)A substrates. The composition and thicknesses of individual layers of heterostructures on GaAs (100) substrates have been refined by analyzing thickness fluctuations on diffraction reflection curves.

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作者简介

Е. Klimov

National Research Centre “Kurchatov Institute”; Orion R&P Association, JSC

编辑信件的主要联系方式.
Email: s_s_e_r_p@mail.ru
俄罗斯联邦, Moscow; Moscow

A. Klochkov

National Research Nuclear University “MEPhI”

Email: s_s_e_r_p@mail.ru
俄罗斯联邦, Moscow

S. Pushkarev

National Research Centre “Kurchatov Institute”

Email: s_s_e_r_p@mail.ru
俄罗斯联邦, Moscow

参考

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2. Fig. 1. Design of superlattice nanoheterostructures. QW – quantum well.

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3. Fig. 2. Bright-field TEM images of samples: a – 105 (100), b – 103 (110), 104 (111)A. The insets show the corresponding electron diffraction patterns.

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4. Fig. 3. Defects in sample 104 (111)A: a – defect formed in the middle of the film thickness and growing to the surface, bright-field TEM image; b – twinning and stacking defects, high-resolution image.

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5. Fig. 4. Bright-field TEM images of dislocations in samples: a – 106 (100), b – 102 (110), c – 102 (111)A.

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6. Fig. 5. KDO 004 of samples 105 (a) and 106 (b) on GaAs(100) substrates.

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7. Fig. 6. Asymmetrical RDCs of 422 samples 105 (a) and 106 (b) on GaAs(100) substrates at small angles of incidence (1) and small angles of reflection (2).

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8. Fig. 7. RDC 111 of samples 102 (1), 104 (2), 107 (3), 108 (4) on GaAs(111)A substrates; for better visualization, RDC are spaced vertically.

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