Radio Absorber with High Angular Stability of Resonance Frequency Based on Artificial Magnetic Conductor and Resistive Film
- Autores: Kazantsev Y.N.1, Kraftmakher G.A.1, Maltsev V.P.1, Solosin V.S.1,2
- 
							Afiliações: 
							- Kotelnikov Institute of Radioengineering and Electronics (Fryazino Branch), Russian Academy of Sciences
- Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences
 
- Edição: Volume 68, Nº 8 (2023)
- Páginas: 811-816
- Seção: ELECTRODYNAMICS AND RADIO WAVE PROPAGATION
- URL: https://cardiosomatics.ru/0033-8494/article/view/650490
- DOI: https://doi.org/10.31857/S0033849423070045
- EDN: https://elibrary.ru/WOQNAQ
- ID: 650490
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		                                					Resumo
A structure of a radio absorber (RA) with a high stability of resonance frequency based on a resistive film with a sheet resistance of 120 Ω/sq and an artificial magnetic conductor in a pair of capacitive gratings on a dielectric layer with a high permittivity (epsilon_1 >>1) metallized on the opposite side is proposed. The results of numerical calculations of the frequency–angular dependences of the RA reflection coefficient confirm preliminary estimates obtained from analytical expressions. For example, at epsilon_1 = 20 , the shift of the resonance frequency is no greater than 2% at angles of incidence of phi=0^o...60^o , and the bandwidth-to-thickness ratio is 4.29 at phi=0.
Sobre autores
Yu. Kazantsev
Kotelnikov Institute of Radioengineering and Electronics (Fryazino Branch), Russian Academy of Sciences
														Email: yukazantsev@mail.ru
				                					                																			                												                								Fryazino, Moscow oblast, 141190 Russia;						
G. Kraftmakher
Kotelnikov Institute of Radioengineering and Electronics (Fryazino Branch), Russian Academy of Sciences
														Email: yukazantsev@mail.ru
				                					                																			                												                								Fryazino, Moscow oblast, 141190 Russia						
V. Maltsev
Kotelnikov Institute of Radioengineering and Electronics (Fryazino Branch), Russian Academy of Sciences
														Email: yukazantsev@mail.ru
				                					                																			                												                								Fryazino, Moscow oblast, 141190 Russia						
V. Solosin
Kotelnikov Institute of Radioengineering and Electronics (Fryazino Branch), Russian Academy of Sciences; Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences
							Autor responsável pela correspondência
							Email: yukazantsev@mail.ru
				                					                																			                												                								Fryazino, Moscow oblast, 141190 Russia; Moscow, 125412 Russia						
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