Partially Disordered Crystalline State in a Thin Ge2Sb2Te5 Film: Manifestation of Thermally Induced Nanoscale Effect

Мұқаба

Дәйексөз келтіру

Толық мәтін

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Аннотация

Using a pulsed electron diffraction instrument, a phase transition in a ~10 nm Ge2Sb2Te5 (GST) film was studied upon heating it from room temperature to ~ 400°C. During crystallization of a free-standing amorphous sample, the formation of a hexagonal GST phase was detected, for which mixing Sb and Ge leads to a formal violation of translational symmetry and unit cell symmetry. However, upon heating an identical amorphous GST film on a carbon membrane, the crystalline state turned out to be represented only by a cubic phase. Within the framework of the Phillips theory, a qualitative explanation is proposed for such a nanoscale effect in GST, which opens up new possibilities for controlling structural ordering in phase-change memory materials (PCMM).

Авторлар туралы

B. Mironov

Institute of Spectroscopy of the Russian Academy of Sciences, Moscow, Troitsk, Russia

Moscow, Troitsk, Russia

D. Poydashev

Institute of Spectroscopy of the Russian Academy of Sciences, Moscow, Troitsk, Russia

Moscow, Troitsk, Russia

S. Aseyev

Institute of Spectroscopy of the Russian Academy of Sciences, Moscow, Troitsk, Russia

Moscow, Troitsk, Russia

A. Malinovsky

Institute of Spectroscopy of the Russian Academy of Sciences, Moscow, Troitsk, Russia

Moscow, Troitsk, Russia

A. Avilov

Shubnikov Institute of Crystallography of the Kurchatov Complex Crystallography and Photonics of the NRC “Kurchatov Institute”, Moscow, 119333 Russia

Email: avilovanatoly@mail.ru
Moscow, 119333 Russia

A. Ischenko

RTU–MIREA – Russian Technological University, Lomonosov Institute of Fine Chemical Technologies, Moscow, Russia

Moscow, Russia

E. Ryabov

Institute of Spectroscopy of the Russian Academy of Sciences, Moscow, Troitsk, Russia

Moscow, Troitsk, Russia

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