Development and research of a slow-wave system for a miniature W-band multibeam traveling wave lamp
- Autores: Torgashov R.A.1,2, Nozhkin D.A.1,2, Starodubov A.V.1,2, Ryskin N.M.1,2
- 
							Afiliações: 
							- Kotelnikov Institute of Radioengineering and Electronics Russian Academy of Sciences, Saratov Branch
- Saratov National Research State University named by N.G.Chernyshevskiy
 
- Edição: Volume 68, Nº 10 (2023)
- Páginas: 992-997
- Seção: ЭЛЕКТРОНИКА СВЧ
- URL: https://cardiosomatics.ru/0033-8494/article/view/650458
- DOI: https://doi.org/10.31857/S0033849423100182
- EDN: https://elibrary.ru/YZMCNJ
- ID: 650458
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		                                					Resumo
The results of the development of a meander-type slow-wave system (SS) with metal supports for a miniature high-power W-band traveling wave lamp (TWT) with two ribbon electron beams are presented. Using a three-dimensional finite element software package, the electrodynamic parameters of the GS were studied. A two-section model of a TWT amplifier with a discontinuity has been developed to prevent self-excitation. Three-dimensional modeling of electron-wave interaction was carried out. It was found that with a total beam current of 200 mA in linear mode, the gain exceeds 30 dB in the frequency band 95.4...97.75 GHz, and the output power in saturation mode reaches 120 W. A technology for manufacturing SS based on laser microprocessing of thin copper plates is proposed. Test samples of the SS were manufactured and verified using optical and scanning microscopy.
Sobre autores
R. Torgashov
Kotelnikov Institute of Radioengineering and Electronics Russian Academy of Sciences, Saratov Branch; Saratov National Research State University named by N.G.Chernyshevskiy
														Email: torgashovra@gmail.com
				                					                																			                												                								Saratov, 410019, Russia; Saratov, 410012, Russia						
D. Nozhkin
Kotelnikov Institute of Radioengineering and Electronics Russian Academy of Sciences, Saratov Branch; Saratov National Research State University named by N.G.Chernyshevskiy
														Email: torgashovra@gmail.com
				                					                																			                												                								Saratov, 410019, Russia; Saratov, 410012, Russia						
A. Starodubov
Kotelnikov Institute of Radioengineering and Electronics Russian Academy of Sciences, Saratov Branch; Saratov National Research State University named by N.G.Chernyshevskiy
														Email: torgashovra@gmail.com
				                					                																			                												                								Saratov, 410019, Russia; Saratov, 410012, Russia						
N. Ryskin
Kotelnikov Institute of Radioengineering and Electronics Russian Academy of Sciences, Saratov Branch; Saratov National Research State University named by N.G.Chernyshevskiy
							Autor responsável pela correspondência
							Email: torgashovra@gmail.com
				                					                																			                												                								Saratov, 410019, Russia; Saratov, 410012, Russia						
Bibliografia
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- Ryskin N.M., Torgashov R.A., Starodubov A.V. et al. // J. Vac. Sci. Technol. B. 2021. V. 39. № 1. P. 013204. https://doi.org/10.1116/6.0000716
- Стародубов А.В., Ножкин Д.А., Расулов И.И. и др. // РЭ. 2022. Т. 67. № 10. С. 935. https://doi.org/10.31857/S0033849422100126
- Starodubov A.V., Serdobintsev A.A., Galkin A.G. et al. // Intern. Conf. on Actual Problems of Electron Devices Engineering (APEDE). Saratov, 24–25 Sept. 2020. N.Y.: IEEE, 2020. P. 256. https://doi.org/10.1109/APEDE48864.2020.9255610
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