Thin Film Formation During the Au Thermal Vacuum Evaporation at the (100) GaAs Substrate Surface

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Abstract

The processes of formation of thin gold films on the surface substrate of gallium arsenide during evaporation in vacuum are investigated. The formation of gallium arsenide islands with a hexagonal lattice structure is detected. The influence of the conditions of manufacturing Au-GaAs contacts on the possibility of their use in microwave devices is discussed.

About the authors

T. A. Bryantseva

Fryazino Branch of the Kotelnikov Institute of Radioengineering and Electronics of RAS

Vvedensky Squar., 1, Fryazino, Moscow Region, 141190

V. E. Lyubchenko

Fryazino Branch of the Kotelnikov Institute of Radioengineering and Electronics of RAS

Email: lyubch@fireras.su
Vvedensky Squar., 1, Fryazino, Moscow Region, 141190

I. A. Markov

Fryazino Branch of the Kotelnikov Institute of Radioengineering and Electronics of RAS

Vvedensky Squar., 1, Fryazino, Moscow Region, 141190

Yu. A. Ten

Fryazino Branch of the Kotelnikov Institute of Radioengineering and Electronics of RAS

Vvedensky Squar., 1, Fryazino, Moscow Region, 141190

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