Factors that reduce the duration of picosecond stimulated emission of the AlxGa1–xAs–GaAs–AlxGa1–xAs heterostructure
- Autores: Ageeva N.N.1, Bronevoi I.L.1, Krivonosov A.N.1
- 
							Afiliações: 
							- Kotel’nikov Institute of Radioengineering and Electronics RAS
 
- Edição: Volume 70, Nº 2 (2025)
- Páginas: 165-175
- Seção: PHYSICAL PROCESSES IN ELECTRONIC DEVICES
- URL: https://cardiosomatics.ru/0033-8494/article/view/685046
- DOI: https://doi.org/10.31857/S0033849425020071
- EDN: https://elibrary.ru/GLYCJG
- ID: 685046
Citar
Texto integral
 Acesso aberto
		                                Acesso aberto Acesso está concedido
						Acesso está concedido Acesso é pago ou somente para assinantes
		                                							Acesso é pago ou somente para assinantes
		                                					Resumo
New experimental data have been obtained indicating the following two reasons for the previously discovered significant decrease in the duration of the intrinsic picosecond emission of the AlxGa1–xAs–GaAs–AlxGa1–xAs heterostructure emerging from its end in a preferred direction: 1) the emission reflected from the end returning to the active region takes up a significant portion of the population inversion energy that would otherwise be spent on generating emission moving toward the end; 2) the resulting inhomogeneities in the reflected emission caused such a switching of the states of the multistable photonic crystal induced in the heterostructure by its emission that the forbidden zone for the emission emerging from the end in a preferred direction grew, and the emission trajectories changed in the heterostructure and, as a consequence, in the air space.
Texto integral
 
												
	                        Sobre autores
N. Ageeva
Kotel’nikov Institute of Radioengineering and Electronics RAS
														Email: bil@cplire.ru
				                					                																			                												                	Rússia, 							Mokhovaya Srt., 11, build. 7, Moscow, 125009						
I. Bronevoi
Kotel’nikov Institute of Radioengineering and Electronics RAS
							Autor responsável pela correspondência
							Email: bil@cplire.ru
				                					                																			                												                	Rússia, 							Mokhovaya Srt., 11, build. 7, Moscow, 125009						
A. Krivonosov
Kotel’nikov Institute of Radioengineering and Electronics RAS
														Email: bil@cplire.ru
				                					                																			                												                	Rússia, 							Mokhovaya Srt., 11, build. 7, Moscow, 125009						
Bibliografia
- Ageeva N.N., Bronevoi I.L., Kumekov S.E. et al. // Proc. SPIE. 1992. V. 1842. P. 70.
- Aгеева Н.Н., Броневой И.Л., Кривоносов А.Н. // ЖЭТФ. 2022. Т. 162. № 6. С. 1018.
- Aгеева Н.Н., Броневой И.Л., Кривоносов А.Н. // РЭ. 2023. Т. 68. № 3. С. 211.
- Aгеева Н.Н., Броневой И.Л., Кривоносов А.Н. // РЭ. 2024. Т. 69. № 2. С. 187.
- Aгеева Н.Н., Броневой И.Л., Кривоносов А.Н. // РЭ. 2024. Т. 69. № 7. С. 52.
- Aгеева Н.Н., Броневой И.Л., Кривоносов А.Н. // РЭ. 2025. Т. 70. № 1. С. 63.
- Агеева Н.Н., Броневой И.Л., Кривоносов А.Н. и др. // ФТП. 2020. Т. 54. № 10. С. 1018.
- Агеева Н.Н., Броневой И.Л., Кривоносов А.Н. и др. // ФТП. 2002. Т. 36. № 2. С. 144.
- Агеева Н.Н., Броневой И.Л., Кривоносов А.Н. и др. // ЖЭТФ. 2013. Т. 144. № 2. С. 227.
- Bозианова А.В., Ходзицкий М.К. // Нанофотоника. Часть 1. СПб: НИУ ИТМО, 2013.
- Агеева Н.Н., Броневой И.Л., Кривоносов А.Н. и др. // ЖЭТФ. 2013. Т. 143. № 4. С. 634.
Arquivos suplementares
 
				
			 
						 
						 
					 
						 
						 
									

 
  
  
  Enviar artigo por via de e-mail
			Enviar artigo por via de e-mail 









