Fermi level pinning on the (110) oxidized surface of AIII-Sb semiconductors

P. A. Alekseev; Алексеев П. А.; A. N. Smirnov; Смирнов А. Н.; V. A. Sharov; Шаров В. А.; B. R. Borodin; Бородин Б. Р.; E. V. Kunitsyna; Куницына Е. В.

doi:10.31857/S0367676523701430

Fermi level pinning on the (110) oxidized surface of AIII-Sb semiconductors

Авторлар: Alekseev P.A.¹, Smirnov A.N.¹, Sharov V.A.¹, Borodin B.R.¹, Kunitsyna E.V.¹
Мекемелер:
1. Ioffe Physical-Technical Institute of the Russian Academy of Sciences
Шығарылым: Том 87, № 6 (2023)
Беттер: 829-832
Бөлім: Articles
URL: https://cardiosomatics.ru/0367-6765/article/view/654380
DOI: https://doi.org/10.31857/S0367676523701430
EDN: https://elibrary.ru/VLLSLD
ID: 654380

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Рұқсат жабық

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Аннотация
Авторлар туралы
Әдебиет тізімі
Қосымша файлдар
Статистика

Аннотация

Pinning of the Fermi level on the oxidized (110) surface of AIII-Sb semiconductors (GaSb, Ga_0.78In_0.22As_0.18Sb_0.82, Ga_0.66Al_0.34As_0.025Sb_0.975) was studied. It is shown that the Fermi level is pinned at 4.65 ± 0.1 eV from the vacuum level. The presence of Sb was shown for the photooxidized Ga_0.78In_0.22As_0.18Sb_0.82 and Ga_0.66Al_0.34As_0.025Sb_0.975 surfaces. The formation of Sb on the surface because of faster oxidation of group III elements results in pinning of the Fermi level at the same distance from the vacuum level in III-Sb compounds.

Әдебиет тізімі

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