Changes in the kinetic characteristics of free charge carriers in a narrow-gap semiconductor Pb 1 –  x  Gd  x  Te under the influence of electron paramagnetic resonance processes of Gd 3+  ions

V. A. Ulanov; Уланов В. А.; R. R. Zainullin; Зайнуллин Р. Р.; I. V. Yatsyk; Яцык И. В.; I. I. Fazlizhanov; Фазлижанов И. И.

doi:10.31857/S0367676523703076

Changes in the kinetic characteristics of free charge carriers in a narrow-gap semiconductor Pb_{1 – x}Gd_xTe under the influence of electron paramagnetic resonance processes of Gd³⁺ ions

Authors: Ulanov V.A.¹^,2, Zainullin R.R.¹, Yatsyk I.V.², Fazlizhanov I.I.²
Affiliations:
1. Kazan State Power Engineering University
2. Zavoisky Physical-Technical Institute, Federal Research Center “Kazan Scientific Center of the Russian Academy of Sciences”
Issue: Vol 87, No 12 (2023)
Pages: 1781-1787
Section: Articles
URL: https://cardiosomatics.ru/0367-6765/article/view/654540
DOI: https://doi.org/10.31857/S0367676523703076
EDN: https://elibrary.ru/QKALJV
ID: 654540

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Abstract
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Abstract

In crystals of the narrow-gap semiconductor Pb_{1 –} _xGd_xTe (x = 1.5 · 10^–4) at temperatures T = 5–100 K, the method of electron paramagnetic resonance (EPR) revealed unusual dependences of the line shape of the EPR spectra of paramagnetic Gd³⁺ centers on temperature and the microwave power level in the spectrometer cavity. Based on the results of the analysis of the shape parameters of resonance lines recorded in the X-band, it was concluded that the most probable cause of changes in the observed EPR spectra is the effect of resonance transitions between the spin levels of Gd³⁺ centers on the kinetic characteristics of free charge carriers bound by exchange interactions with Gd³⁺ ions.

Keywords

lead chalcogenide, narrow-gap semiconductor, electron paramagnetic resonance, Gd³⁺, EPR line shape

References

Равич Ю.И., Ефимова Б.А., Смирнов И.А. Методы исследования полупроводников в применении к халькогенидам свинца PbTe, PbSe и PbS. М.: Наука, 1968. 384 с.
Кайданов В.И., Равич Ю.И. // УФН. 1985. Т. 145. № 1. С. 51; Kaidanov V.I., Ravich Yu. I. // Phys. Usp. 1985. V. 28. No. 1. P. 31.
Zhang Y., Xuezhi K., Kent P.R.C. et al. // Phys. Rev. Lett. 2011. V. 107. Art. No. 175503.
Bozin, E.S., Malliakas C.D., Souvatzis P. et al. // Science. 2010. V. 330. P. 1660.
Lusakowski A. // Phys. Rev. B. 2005. V. 72. Art. No. 094429.
Story T. // Acta Phys. Polonica A. 1998. V. 94. P. 189.
Zayachuk D.M., Ivanchuk D.D., Ivanchuk R.D. et al. // Phys. Stat. Sol. A. 1990. V. 119. P. 215.
Алексеева Г.Т., Ведерников М.В., Гуриева Е.А. и др. // ФТП. 1998. Т. 32. С. 806; Alekseeva G.T., Vedernikov M.V., Gurieva E.A. et al. // Semiconductors. 1998. V. 32. P. 716.
Уланов В.А., Зайнуллин Р.Р., Хушея Т.А.Н., Яцык И.В. // Изв. РАН. Сер. физ. 2021. Т. 85. № 12. С. 1682; Ulanov V.A., Zainullin R.R., Khusheya T.A.N., Yatsyk I.V. // Bull. Russ. Acad. Sci. Phys. 2021. V. 85. No. 12. P. 1337.
Barnes S.E. // Adv. Phys. 1981. V. 30. P. 801.
Абрагам А., Блини Б. Электронный парамагнитный резонанс переходных ионов. Т. 1. М.: Мир, 1972. 652 с.
Уланов В.А., Зайнуллин Р.Р., Яцык И.В., Хушея Т.А.Н. // Изв. РАН. Сер. физ. 2021. Т. 85. № 12. С. 1688; Ulanov V.A., Zaynullin R.R., Yatsyk I.V., Khusheya T.A.N. // Bull. Russ. Acad. Sci. Phys. 2021. V. 85. No. 12. P. 1342.
Vladimirova M., Cronenberger S., Barate P. et al. // Phys. Rev. B. 2008. V. 78. Art. No. 081305(R).
Васильев П.П. // Письма в ЖЭТФ. 2022. Т. 115. № 1. С. 35; Vasil’ev P.P. // JETP Lett. 2022. V. 115. No. 1. P. 29.