МОДЕЛИРОВАНИЕ ПРИБОРОВ
| 期 | 标题 | 文件 | |
| 卷 52, 编号 1 (2023) | Calculation of the Electric Field Strength and Current Density Inside a Thin Metal Layer, Taking into Account the Skin Effect |
 (Rus) |
|
| Zavitaev E., Rusakov O., Chukhleb E. | |||
| 1 - 1 的 1 信息 | |||
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关键字
Förster effect
bipolar transistor
diagnostics
etching
gas temperature
ionization
kinetics
magnetron sputtering
mechanism
memristor
modeling
molecular beam epitaxy
plasma
polymerization
powerful LDMOS
quantum dot
reduced electric field strength
resistive switching
silicon
silicon-on-insulator technology
specific power
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卷 54, 编号 4 (2025)
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关键字
Förster effect
bipolar transistor
diagnostics
etching
gas temperature
ionization
kinetics
magnetron sputtering
mechanism
memristor
modeling
molecular beam epitaxy
plasma
polymerization
powerful LDMOS
quantum dot
reduced electric field strength
resistive switching
silicon
silicon-on-insulator technology
specific power
最新一期