НАДЕЖНОСТЬ
| 期 | 标题 | 文件 | |
| 卷 52, 编号 4 (2023) | Study of the Sensitive Region of a MOS Transistor to the Effects of Secondary Particles Arising from Ionizing Radiation |
 (Rus) |
|
| Glushko A., Morozov S., Chistyakov M. | |||
| 卷 52, 编号 4 (2023) | Single Event Displacement Effects in a VLSI |
(Rus) |
|
| Chumakov A. | |||
| 1 - 2 的 2 信息 | |||